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  • SiC Vacuum Chuck

    SiC Vacuum Chuck

    Semicorex SiC Vacuum Chuck represents a pinnacle of precision engineering tailored for the demanding semiconductor industry. Crafted from graphite substrates and enhanced through state-of-the-art Chemical Vapor Deposition (CVD) techniques, this innovative device seamlessly integrates the unparalleled properties of Silicon Carbide (SiC) coating. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Glassy Carbon Coated Felt

    Glassy Carbon Coated Felt

    Semicorex Glassy Carbon Coated Felt is a high-performance insulation material enhanced with an innovative Glass-like Carbon Coating, offering superior scratch resistance, reduced dust generation, and enhanced oxidation and silicon infiltration resistance. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
  • CVD shower head with SiC Coat

    CVD shower head with SiC Coat

    Semicorex CVD shower head with SiC Coat represents an advanced component engineered for precision in industrial applications, notably within the realms of chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD). Serving as a critical conduit for the delivery of precursor gases or reactive species, this specialized CVD shower head with SiC Coat facilitates the precise deposition of materials onto a substrate’s surface, integral to these sophisticated manufacturing processes.
  • SiC Cantilever Paddle

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    Semicorex SiC (Silicon Carbide) Cantilever Paddle is a crucial component used in semiconductor manufacturing processes, particularly in diffusion or LPCVD (Low-Pressure Chemical Vapor Deposition) furnaces during processes like diffusion and RTP (Rapid Thermal Processing). The SiC Cantilever Paddle is to carry semiconductor wafers securely within the process tube during various high-temperature processes such as diffusion and RTP. It serves the purpose of supporting and transporting wafers within the process tube of these furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

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    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

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    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

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TaC Coating;wafer carrier trays;Semiconductor Shower Head;semiconductor components;spare parts for epitaxial;CVD TaC;CVD coating;tantalum carbide;tantalum carbide coating;MOCVD

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