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  • Barrel Susceptor for Liquid Phase Epitaxy

    Barrel Susceptor for Liquid Phase Epitaxy

    If you need a graphite susceptor that can perform reliably and consistently in even the most demanding high-temperature and corrosive environments, the Semicorex Barrel Susceptor for Liquid Phase Epitaxy is the perfect choice. Its silicon carbide coating provides excellent thermal conductivity and heat distribution, ensuring exceptional performance in semiconductor manufacturing applications.
  • ICP Etching Carrier Plate

    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • TaC Coating Graphite Cover

    TaC Coating Graphite Cover

    Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Upper Halfmoon

    TaC Coating Upper Halfmoon

    Semicorex TaC Coating Upper Halfmoon is a specialized component engineered for high-performance epitaxial processes in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Chuck

    TaC Coated Chuck

    Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Epitaxial Module

    SiC Epitaxial Module

    SiC Epitaxial Module from Semicorex combines durability, purity, and precision engineering, which is a critical component in SiC epitaxial growth. Choose Semicorex for unmatched quality in coated graphite solutions and long-term performance in demanding environments.*
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  • Reviews

  • What is CVD process in semiconductor?

    Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

  • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

    As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

  • What is the Difference Between Epitaxial and Diffused Wafers

    Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • Synthesizing High-Purity Silicon Carbide Powder

    High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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