English
Home > Products > UV LED Chip Epitaxy

China UV LED Chip Epitaxy Manufacturers, Suppliers, Factory

All we do is usually affiliated with our tenet " Buyer to start with, Belief to start with, devoting about the food packaging and environmental defense for UV LED Chip Epitaxy,Silicon Carbide-Coated,SiC Graphite Supplies Susceptors,Graphite Susceptors for Silicon,SiC Coating for GaN Epitaxy, sincerity and strength ,constantly preserve approved superior quanlity ,welcome to our factoty for pay a visit to and instruction and organization.
UV LED Chip Epitaxy, Our main objectives are to provide our customers worldwide with good quality, competitive price, satisfied delivery and excellent services. Customer satisfaction is our main goal. We welcome you to visit our showroom and office. We're looking forward to establish business relation with you.

Related Products

Hot Products

  • MOCVD Inlet Seal Ring

    MOCVD Inlet Seal Ring

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Seal Ring has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Silicon Carbide Chamber Lid

    Silicon Carbide Chamber Lid

    Silicon Carbide Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • High-purity Graphite Powder

    High-purity Graphite Powder

    Semicorex High-purity graphite powder is a critical material in the semiconductor industry, particularly in the crystal growth process, where it plays a vital role in enabling high-quality, efficient, and precise production. Semicorex delivers high-purity graphite powder with unparalleled quality and precision, tailored to meet the stringent demands of the semiconductor industry.*
  • 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Barrel Susceptor for Epitaxial Growth

    SiC Coated Barrel Susceptor for Epitaxial Growth

    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • Alumina End Effector

    Alumina End Effector

    Semicorex Alumina End Effector has emerged as an indispensable tool in the demanding realm of semiconductor manufacturing, where even microscopic imperfections can compromise device performance, the role of precision wafer handling cannot be overstated. The Alumina End Effector provides a unique combination of precision, purity, and durability essential for manipulating delicate silicon wafers throughout various fabrication processes.**
  • Related Blog
  • Reviews

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • What is Silicon Nitride

    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept