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Reliable top quality and great credit score standing are our principles, which will help us at a top-ranking position. Adhering on the tenet of "quality first, consumer supreme" for TEL parts,sic coated graphite,SiC coating,epitaxy furnace,mocvd reactor, Sincerely stay up for serving you from the in the vicinity of future. You are sincerely welcome to go to our company to talk company face to face with each other and create long-term co-operation with us!
TEL parts, We always insist on the principle of "Quality and service are the life of the product". Till now, our products have been exported to more than 20 countries under our strict quality control and high level service.

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  • Silicon Carbide Wafer Chuck

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    The Semicorex Silicon Carbide Wafer Chuck is an essential component in the semiconductor epitaxial process. It serves as a vacuum chuck to securely hold wafers during critical manufacturing stages. We are committed to delivering top-quality products at competitive prices, positioning ourselves to be your long-term partner in China.*
  • SiC Dummy Wafer

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    Semicorex SiC Dummy Wafer is a specialized tool in semiconductor manufacturing, designed primarily for experimental and testing purposes.**
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  • SiC Chuck

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  • Half Parts Drum Products Epitaxial Part

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  • Related Blog
  • Reviews

  • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

    Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • SiC Ingot Processing

    As a representative of third-generation semiconductor materials, silicon carbide (SiC) boasts a wide bandgap, high thermal conductivity, high breakdown electric field, and high electron mobility, making it an ideal material for high-voltage, high-frequency, and high-power devices. It effectively overcomes the physical limitations of traditional silicon-based power semiconductor devices and is hailed as a green energy material driving the "new energy revolution." In the manufacturing process of power devices, the growth and processing of SiC single crystal substrates are critical to performance and yield.

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