China single wafer carrier Manufacturers, Suppliers, Factory

Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.

Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor technology.