English
Home > Products > test wafer

China test wafer Manufacturers, Suppliers, Factory

We also offer you product sourcing and flight consolidation expert services. We've our personal manufacturing unit and sourcing business. We can offer you virtually every variety of merchandise associated to our item range for test wafer,dummy wafer,silicon carbide wafer manufacturers,sic epi wafers,wafer testing process, Never-ending improvement and striving for 0% deficiency are our two main quality policies. Should you need anything, don't hesitate to contact us.
test wafer, Our main objectives are to provide our customers worldwide with good quality, competitive price, satisfied delivery and excellent services. Customer satisfaction is our main goal. We welcome you to visit our showroom and office. We're looking forward to establish business relation with you.

Related Products

Hot Products

  • Zirconia Ceramic Nozzle

    Zirconia Ceramic Nozzle

    Semicorex Zirconia Ceramic Nozzle, crafted with meticulous attention to detail, this nozzle stands as the epitome of excellence in controlling the flow rate of both gases and liquids with unparalleled uniformity and precision. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Semiconductor Quartz Bell Jar

    Semiconductor Quartz Bell Jar

    Semicorex Semiconductor Quartz Bell Jar is a specialized vessel constructed from high-purity quartz material. Its design is tailored to meet the stringent requirements of semiconductor manufacturing processes, where purity and cleanliness are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Alumina Ceramic Manipulator

    Alumina Ceramic Manipulator

    Semicorex alumina ceramic manipulator is a high-performance semiconductor equipment component made of high-purity alumina, engineered specifically for the precise handling of contamination-free wafers. This manipulator has the characteristics of exceptional cleanliness, superior stability, high precision, enhanced efficiency and reliable performance, making it your ideal choice.
  • Rigid Felt Crucible

    Rigid Felt Crucible

    Semicorex Rigid Felt Crucible stands out as a premium choice for high-temperature applications in the semiconductor industry. Its combination of high compressive strength and excellent thermal insulation makes it a reliable and efficient component in crystal growth processes. By choosing Semicorex Rigid Felt Crucible, you invest in a product that not only enhances your manufacturing capabilities but also supports your commitment to quality and performance. *
  • Carbon Fiber Paper

    Carbon Fiber Paper

    Semicorex Carbon Fiber Paper is a critical component for enhancing the efficiency, durability, and performance of fuel cells and other electrochemical devices.
  • CVD SiC Ring

    CVD SiC Ring

    Semicorex CVD SiC Ring stands as an essential component within the intricate landscape of semiconductor manufacturing, specifically designed to play a crucial role in the etching process. Crafted with precision and innovation, this ring is exclusively fashioned from Chemical Vapor Deposition Silicon Carbide (CVD SiC), exemplifying a material known for its exceptional properties in the demanding semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • The Application Prospects of 12-Inch Silicon Carbide Substrates

    Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Ceramic Heaters

    In the front-end process (FEOL) of semiconductor manufacturing, the wafer needs to be subjected to various process treatments, especially the wafer needs to be heated to a certain temperature, and there are strict requirements, because the uniformity of temperature has a very important impact on the product yield; at the same time, semiconductor equipment needs to work in the presence of vacuum, plasma and chemical gases, which requires the use of ceramic heaters.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept