> Products > SiC Etch Process Carrier

China SiC Etch Process Carrier Manufacturers, Suppliers, Factory

Our progress depends on the highly developed products ,great talents and repeatedly strengthened technology forces for SiC Etch Process Carrier,Etch Carrier(ICP/PSS),Substrate Etching Carrier,Silicon Carbide Fixture Plate,Silicon Carbide Coated Graphite Susceptor, We warmly welcome pals from all walks of lifetime to hunt mutual cooperation and generate a far more outstanding and splendid tomorrow.
SiC Etch Process Carrier, Being the top solutions of our factory, our solutions series have been tested and won us experienced authority certifications. For additional parameters and item list details, be sure to click the button to acquire additional nformation.

Hot Products

Silicon Etch Plate for PSS Etching Applications
Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
ICP Plasma Etching System
Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
SiC Coating Graphite Substrate Wafer Carriers for MOCVD
You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
SiC Epi-Wafer Susceptor
Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Epi-Wafer Susceptor has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
TaC Coated Wafer Susceptor
Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
SiC Coating Ring
Semicorex SiC Coating Ring is a critical component in the demanding environment of semiconductor epitaxy processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*

Related Blog
Reviews

Korean memory chips plummeted
What is the process of isostatic graphite manufacturing?
The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization.
Oxidation Process
The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).
What is the Difference Between Epitaxial and Diffused Wafers
Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.
Thin film growth process
Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.
Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers
Etching Process: Silicon vs. Silicon Carbide

China SiC Etch Process Carrier Manufacturers, Suppliers, Factory

Related Products

Hot Products

Silicon Etch Plate for PSS Etching Applications

ICP Plasma Etching System

SiC Coating Graphite Substrate Wafer Carriers for MOCVD

SiC Epi-Wafer Susceptor

TaC Coated Wafer Susceptor

SiC Coating Ring

Korean memory chips plummeted

What is the process of isostatic graphite manufacturing?

Oxidation Process

What is the Difference Between Epitaxial and Diffused Wafers

Thin film growth process

Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

Mamie 2023-10-28 04:56:32

Lesley 2023-04-11 10:35:49

Cornelia 2023-05-01 07:56:36

Andrew 2023-05-25 22:43:05

Cindy 2024-04-04 01:16:03

Julie 2023-11-24 03:46:09

Send Inquiry