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China SiC Carrier Manufacturers, Suppliers, Factory

"Based on domestic market and expand abroad business" is our enhancement strategy for SiC Carrier,Etch Carrier(ICP/PSS),SiC Wafer Holder,Silicon Carbide-Coated Wafer Holder,MOCVD Wafer Carrier, In our efforts, we already have many shops in China and our products have won praise from customers worldwide. Welcome new and old customers to contact us for the future long term business relationships.
SiC Carrier, Our company is working by the operation principle of "integrity-based, cooperation created, people oriented, win-win cooperation". We hope we can have a friendly relationship with businessman from all over the world.

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    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Crystal Growth Susceptor is the ideal choice for use in single crystal growth applications. Its silicon carbide coating provides excellent flatness and heat distribution properties, making it an ideal choice for high-temperature environments.
  • RTP SiC Coating Carrier

    RTP SiC Coating Carrier

    Semicorex RTP SiC Coating Carrier offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With its high-quality SiC coated graphite, this product is designed to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • 850V High Power GaN-on-Si Epi Wafer

    850V High Power GaN-on-Si Epi Wafer

    Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Support Crucible

    Support Crucible

    Semicorex Support Crucible stands as a pivotal component within the intricate process of solar silicon crystal growth, serving as a steadfast foundation for the transformation of raw materials into high-quality silicon ingots destined for photovoltaic applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Liner

    Silicon Carbide Liner

    Semicorex Silicon Carbide Liner is a versatile and robust material that serves as an invaluable asset in optimizing the efficiency and longevity of industrial processing equipment.
  • Monocrystalline silicon planar target

    Monocrystalline silicon planar target

    Monocrystalline silicon planar target from Semicorex is a crucial component in cutting-edge semiconductor manufacturing industry. Manufactured by top-quality monocrystalline silicon material, it features a highly ordered crystal structure and remarkable purity. These properties make it an ideal solution for manufacturing reliable, high-performance semiconductor films and optical films.
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  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Knowing GaN

    Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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SiC Carrier Etching Disc for SemiconductorSiC Carrier for Etching Plasma EtchingSiC Carrier susceptorSiC Carrier/Susceptor

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