China SiC Carrier/Susceptor Manufacturers, Suppliers, Factory

In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

In the front-end process (FEOL) of semiconductor manufacturing, the wafer needs to be subjected to various process treatments, especially the wafer needs to be heated to a certain temperature, and there are strict requirements, because the uniformity of temperature has a very important impact on the product yield; at the same time, semiconductor equipment needs to work in the presence of vacuum, plasma and chemical gases, which requires the use of ceramic heaters.

A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.