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Semiconductor Manufacturing Process, We've got more than 200 staff including experienced managers, creative designers, sophisticated engineers and skilled workers. Through hard work of all employees for the past 20 years own company grew stronger and stronger. We always apply the "client first" principle. We also always fulfill all contracts to the point and therefore enjoy excellent reputation and trust among our customers. You are very welcome to personally visit our company.We hope to start a business partnership on the basis of mutual benefit and successful development . For more information make sure you do no hesitate to contact us.

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  • 30mm Aluminum Nitride Wafer Substrate

    30mm Aluminum Nitride Wafer Substrate

    The unique attributes of Semicorex 30mm Aluminum Nitride Wafer Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 30mm Aluminum Nitride Wafer Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 30mm Aluminum Nitride Wafer Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • PFA Wafer Carriers

    PFA Wafer Carriers

    Semicorex PFA Wafer Carriers are high-purity, chemically resistant solution designed to safely handle and transport semiconductor wafers in ultra-clean environments. Trusted by leading fabs and OEMs, Semicorex delivers precision-engineered carriers with consistent quality, fast lead times, and full customization to meet the evolving demands of advanced semiconductor manufacturing.*
  • Porous SiC Chuck

    Porous SiC Chuck

    Semicorex Porous SiC Chuck is a high-performance ceramic vacuum chuck designed for secure and uniform wafer adsorption in semiconductor processing. Its engineered micro-porous structure ensures excellent vacuum distribution, making it ideal for precision applications.*
  • TaC Coated Components in Epitaxial Growth

    TaC Coated Components in Epitaxial Growth

    Semicorex TaC Coated Components in Epitaxial Growth is a precious machined part located in the air intake in the epitaxial process in semiconductor. Semicorex is a top-notch company that specializes in CVD TaC coating technology in China, and exports products worldwide.*
  • Quartz Cold Trap

    Quartz Cold Trap

    Semicorex Quartz Cold Trap is the common glassware used in laboratory. Semicorex is specialized in precious machining for quartz products based on customers’ requirements.*
  • Related Blog
  • Reviews

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What is graphitising？

    Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

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