English
Home > Products > Semiconductor Focus Ring Coating

China Semiconductor Focus Ring Coating Manufacturers, Suppliers, Factory

Our team through qualified training. Skilled professional knowledge, powerful sense of support, to satisfy the support desires of consumers for Semiconductor Focus Ring Coating,Etch Residue Ring,Thin Film Deposition Edge Ring,Custom Focus Ring Solutions,High-Temperature Focus Rings, For even more information and facts, make sure you don't be reluctant to contact us. All inquiries from you might be highly appreciated.
Semiconductor Focus Ring Coating, Now, with the development of internet, and the trend of internationalization, we've got decided to extend business to overseas market. With the propose of bringing more profits to oversea customers by providing directly abroad. So we have changed our mind, from home to abroad, hope to give our customers more profit, and looking forward to more chance to make business.

Related Products

Hot Products

  • SiC Coated Barrel Susceptor for Epitaxial Growth

    SiC Coated Barrel Susceptor for Epitaxial Growth

    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • AlN Ceramic Disc

    AlN Ceramic Disc

    Semicorex AlN Ceramic Disc stands out as a material of exceptional capability, prized for its unique combination of thermal, mechanical, and electrical properties. At Semicorex, we are at the forefront of manufacturing AlN Ceramic Discs, ensuring that these components meet the stringent demands of modern technology and industrial applications.**
  • TaC Coated Graphite Part

    TaC Coated Graphite Part

    Semicorex TaC Coated Graphite Part is a high-performance component designed for use in SiC crystal growth and epitaxy processes, featuring a durable Tantalum Carbide coating that enhances thermal stability and chemical resistance. Choose Semicorex for our innovative solutions, superior product quality, and expertise in providing reliable, long-lasting components tailored to meet the demanding needs of the semiconductor industry.*
  • Wafer Carrier Handles

    Wafer Carrier Handles

    Semicorex Wafer Carrier Handles, made from high-quality PFA material, are designed for the safe and efficient transport of semiconductor wafers within wafer cassettes. Choose Semicorex for our commitment to providing durable, high-purity components that ensure superior performance and reliability in semiconductor manufacturing processes.*
  • TaC Coating Half-moon Part

    TaC Coating Half-moon Part

    Semicorex TaC Coating Half-moon Part is a high-performance component designed for use in SiC epitaxy processes within LPE epitaxy furnaces. Choose Semicorex for unparalleled quality, precision engineering, and a commitment to advancing semiconductor manufacturing excellence.*
  • SiC Ceramic Paddle

    SiC Ceramic Paddle

    Semicorex SiC Ceramic Paddle is a high-purity cantilever component engineered for semiconductor high-temperature furnaces, primarily used in oxidation and diffusion processes. Choosing Semicorex means gaining access to advanced ceramic solutions that ensure exceptional stability, cleanliness, and durability for critical wafer-handling applications.*
  • Related Blog
  • Reviews

  • What is CVD for SiC

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept