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Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.

The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

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