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    Semicorex is committed to manufacturing and supplying Crucible for Monocrystalline Silicon that features exceptional purity, superior thermal properties, mechanical strength, and compatibility with established growth methods, making it indispensable for meeting the stringent demands of the electronics and solar industries.**
  • Quartz Tank for Wet Processing

    Quartz Tank for Wet Processing

    Semicorex Quartz Tank for Wet Processing, also known as quartz bath, is particularly critical in wet processes used for wafer fabrication.**
  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
  • Quartz Crucible in Semiconductor

    Quartz Crucible in Semiconductor

    Semicorex cutting-edge Quartz Crucible in Semiconductor, the epitome of precision and reliability for semiconductor processing. Crafted from semiconductor-grade quartz, this crucible is engineered to meet the demanding requirements of the semiconductor industry, ensuring optimal performance and efficiency in every application. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Mechanical Seal Ring

    Mechanical Seal Ring

    Semicorex provide high-quality Mechanical Seal Ring customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Focus Rings

    SiC Focus Rings

    Semicorex advanced, high-purity SiC Focus Rings are built to withstand the extreme environments in plasma etch (or dry etch) chambers. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
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  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • What is Electrostatic Chuck(ESC)?

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  • Main steps in SiC substrate processing

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