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Ceramic Seal, Our business activities and processes are engineered to make sure our customers have access to widest range of products with the shortest supply time lines. This achievement is made possible by our highly skilled and experienced team. We look for people who want to grow with us around the globe and stand out from the crowd. We now have people who embrace tomorrow, have vision, love stretching their minds and going far beyond what they thought was achievable.

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  • TaC Coating Chuck

    TaC Coating Chuck

    Semicorex TaC Coating Chuck, the cutting-edge vacuum chuck equipped with TaC coatings, specifically designed for semiconductor furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Part

    Tantalum Carbide Part

    Semicorex Tantalum Carbide Part is a TaC-coated graphite component designed for high-performance use in silicon carbide (SiC) crystal growth applications, offering excellent temperature and chemical resistance. Choose Semicorex for reliable, high-quality components that enhance crystal quality and production efficiency in semiconductor manufacturing.*
  • SiN Substrates

    SiN Substrates

    Semicorex Silicon Nitride SiN substrates are high-performance materials known for their exceptional strength, thermal conductivity, and chemical stability, making them ideal for advanced semiconductor applications. Choosing Semicorex SiN substrates ensures you benefit from cutting-edge technology, rigorous quality control, and a commitment to delivering reliable, industry-leading semiconductor components.*
  • Silicon Carbide Graphite Substrate MOCVD Susceptor

    Silicon Carbide Graphite Substrate MOCVD Susceptor

    Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • Teflon Cassette

    Teflon Cassette

    Semicorex Teflon Cassette is a high-performance carrier designed for the efficient handling and cleaning of wafers in semiconductor, photovoltaic, and electronics industries. Choose Semicorex for our reliable, durable, and cost-effective solutions that ensure optimal wafer quality and long-lasting performance throughout the manufacturing process.*
  • TaC Coating Epitaxial Plate

    TaC Coating Epitaxial Plate

    You can rest assured to buy TaC Coating Epitaxial Plate from our factory. Semicorex TaC (Tantalum Carbide) coating epitaxial plate boasts exceptional heat resistance, making it ideal for applications subjected to high temperatures. Its remarkable ability to withstand heat ensures durability and reliability in demanding environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • Understanding Dry Etching Technology in the Semiconductor Industry

    Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.

  • GaN Single Crystal

    Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

  • The structure of Electrostatic Chuck(ESC)

    An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

  • The Application Prospects of 12-Inch Silicon Carbide Substrates

    Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

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