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Our progress depends on the highly developed products ,great talents and repeatedly strengthened technology forces for Sic Sheet Tray,Sic Wafer Sheet,Substrate Holder,Wafer Process,Epitaxial Sheet Tray, We warmly welcome pals from all walks of lifetime to hunt mutual cooperation and generate a far more outstanding and splendid tomorrow.
Sic Sheet Tray, With a wide range, good quality, reasonable prices and stylish designs, our merchandise are extensively used in public placesand other industries. Our products are widely recognized and trusted by users and can meet continuously developing economic and social needs. We welcome new and old customers from all walks of life to contact us for future business relationships and achieving mutual success!

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  • Silicon Etch Plate for PSS Etching Applications

    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • SiC-Coated ICP Component

    SiC-Coated ICP Component

    Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • Monocrystalline Silicon Wafer Susceptor

    Monocrystalline Silicon Wafer Susceptor

    Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.
  • Graphite Heating Elements

    Graphite Heating Elements

    Semicorex Graphite Heating Elements have become essential components in semiconductor manufacturing, enabling the precise and controlled thermal environments required for advanced wafer processing. Their unique combination of material properties, design flexibility, and performance advantages makes them ideal for meeting the stringent demands of next-generation semiconductor device fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heating Elements that fuse quality with cost-efficiency.**
  • Quartz Tank for Wet Processing

    Quartz Tank for Wet Processing

    Semicorex Quartz Tank for Wet Processing, also known as quartz bath, is particularly critical in wet processes used for wafer fabrication.**
  • N-type SiC Substrates

    N-type SiC Substrates

    Semicorex N-type SiC substrates will continue to drive the semiconductor industry towards higher performance and lower energy consumption, as the core material for efficient energy conversion. Semicorex products are driven by technological innovation, and we are committed to providing customers with reliable material solutions and working with partners to define a new era of green energy.*
  • Related Blog
  • Reviews

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

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