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The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

Semiconductor ceramic parts belong to advanced ceramics and are an indispensable part of the semiconductor manufacturing process. The raw materials for preparation are usually high-purity, ultra-fine inorganic materials, such as aluminum oxide, silicon carbide, aluminum nitride, silicon nitride, yttrium oxide, zirconium oxide, etc.

As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.