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    Semicorex Barrel Susceptor Epi System is a high-quality product that offers superior coating adhesion, high purity, and high-temperature oxidation resistance. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of epixial layers on wafer chips. Its cost-effectiveness and customizability make it a highly competitive product in the market.
  • TaC Coated Crucible

    TaC Coated Crucible

    Introducing the CVD Tac coated crucible, the perfect solution for semiconductor equipment manufacturers and users who demand the highest level of quality and performance. Our crucibles are coated with a state-of-the-art CVD Tac (tantalum carbide) layer, which provides superior resistance to corrosion and wear, making them ideal for use in a variety of semiconductor applications.
  • SiC Epitaxy Susceptor

    SiC Epitaxy Susceptor

    Crafted with precision and engineered for reliability, SiC Epitaxy Susceptor features high corrosion resistance, high thermal conductivity, resistance to thermal shock, and high chemical stability, enabling it to function effectively within an epitaxial atmosphere.Therefore, SiC Epitaxy Susceptor is considered a core and crucial component in MOCVD equipment. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • Graphite Carrier for Epitaxial Reactors

    Graphite Carrier for Epitaxial Reactors

    Semicorex Graphite Carrier for Epitaxial Reactors is a SiC coated graphite component with precision micro-holes for gas flow, optimized for high-performance epitaxial deposition. Choose Semicorex for superior coating technology, customization flexibility, and industry-trusted quality.*
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  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • What is the Difference Between Epitaxial and Diffused Wafers

    Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

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