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    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • Epi Pre Heat Ring

    Epi Pre Heat Ring

    Enhance the efficiency and precision of your semiconductor epitaxial processes with the Semicorex cutting-edge Epi Pre Heat Ring. Crafted with precision from SiC-coated graphite, this advanced ring plays a pivotal role in optimizing your epitaxial growth by pre-heating process gases before they enter the chamber.
  • TaC Coating Wafer Susceptor

    TaC Coating Wafer Susceptor

    Semicorex TaC Coating Wafer Susceptor is a graphite tray coated with tantalum carbide, used in silicon carbide epitaxial growth to enhance wafer quality and performance. Choose Semicorex for its advanced coating technology and durable solutions that ensure superior SiC epitaxy results and extended susceptor lifespan.*
  • Carbon and Graphite Soft Felt

    Carbon and Graphite Soft Felt

    Semicorex Carbon and graphite soft felt is a specialized material that is made from carbon fibers or graphite fibers that are intertwined to form a soft, flexible, and porous structure. It is commonly used in various industrial applications due to its unique properties.
  • Silicon Carbide Seal Ring

    Silicon Carbide Seal Ring

    Semicorex Silicon Carbide Seal Ring has emerged as a critical enabling technology within the semiconductor industry, offering unparalleled performance and reliability in the face of increasingly demanding process conditions. Their unique combination of material properties makes it ideal for a wide range of applications, ensuring optimal equipment uptime, extended component lifecycles, and ultimately, lower total cost of ownership. We at Semicorex are dedicated to manufacturing and supplying high-performance Silicon Carbide Seal Ring that fuses quality with cost-efficiency.**
  • Silicon Carbide Mechanical Seal

    Silicon Carbide Mechanical Seal

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Silicon Carbide Mechanical Seal has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
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  • What is the advantage of silicon carbide?

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • What is Diffusion Process

    Doping involves introducing a dose of impurities into semiconductor materials to alter their electrical properties. Diffusion and ion implantation are two methods of doping. Early impurity doping was primarily accomplished through high-temperature diffusion.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

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