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It is actually a good way to boost our products and solutions and repair. Our mission should be to produce imaginative products and solutions to clients using a fantastic working experience for graphite mold,glass bending,hot glass industry,bent glass,precision bent glass, Aggressive selling price with superior quality and satisfying services make us earned far more consumers.we wish to work along with you and look for common improvement.
graphite mold, During in 11 years, We have now participated in more than 20 exhibitions, obtains the highest praise from each customer. Our company has been devoting that "customer first" and committed to helping customers expand their business, so that they become the Big Boss !

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  • Carbide-Coated Reactor Barrel Susceptor

    Carbide-Coated Reactor Barrel Susceptor

    The Semicorex Carbide-Coated Reactor Barrel Susceptor is a premium quality graphite product coated with high-purity SiC, designed specifically for LPE processes. With excellent heat and corrosion resistance, this product is perfect for use in semiconductor manufacturing applications.
  • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Wafer Susceptors for MOCVD

    SiC Wafer Susceptors for MOCVD

    The Semicorex SiC Wafer Susceptors for MOCVD are a paragon of precision and innovation, specifically crafted to facilitate the epitaxial deposition of semiconductor materials onto wafers. The plates’ superior material properties enable them to withstand the stringent conditions of epitaxial growth, including high temperatures and corrosive environments, making them indispensable for high-precision semiconductor manufacturing. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Susceptors for MOCVD that fuse quality with cost-efficiency.
  • SiC ICP Etching Disk

    SiC ICP Etching Disk

    Semicorex SiC ICP Etching Disk is not merely components; it's essential enabler of cutting-edge semiconductor manufacturing as the semiconductor industry continues its relentless pursuit of miniaturization and performance, the demand for advanced materials like SiC will only intensify. It ensures the precision, reliability, and performance required to power our technology-driven world.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC ICP Etching Disk that fuses quality with cost-efficiency.**
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  • Reviews

  • Substantial growth of the SiC coated graphite susceptor market

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Demystifying Electrostatic Chuck (ESC) Technology in Wafer Handling

    Electrostatic chucks (ESCs) have become indispensable in semiconductor manufacturing and flat panel display production, offering a damage-free, highly controllable method for holding and positioning delicate wafers and substrates during critical processing steps. This article delves into the intricacies of ESC technology, exploring its principles of operation, various adhesion mechanisms, and fundamental structural components.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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CNC graphite moldCurved glass graphite moldcustom graphite moldsGraphite moldGraphite mold for glass bendinggraphite molds for glassgraphite molds for steel castingHigh-temperature graphite moldHot bending glass graphite mold

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