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China CNC graphite mold Manufacturers, Suppliers, Factory

Bear "Customer very first, Quality first" in mind, we work closely with our customers and supply them with efficient and professional services for CNC graphite mold,Hot bending glass graphite mold,Graphite mold for glass bending,High-temperature graphite mold,Custom glass forming mold, We have been self-assured to make excellent achievements within the future. We've been looking forward to becoming one within your most trusted suppliers.
CNC graphite mold, Our company will continue to serve customers with best quality, competitive price and timely delivery & the best payment term! We sincerely welcome friends from all over the world to visit& cooperate with us and enlarge our business. If you are interested in our items, make sure you do not hesitate to contact us, we'll be happy to provide you with further information!

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    Semicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • SiC Coated Graphite Susceptor for MOCVD

    SiC Coated Graphite Susceptor for MOCVD

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • TaC Coating Half-moon

    TaC Coating Half-moon

    Semicorex TaC Coating Half-moon is a specialized component crafted from tantalum carbide (TaC) coated graphite, designed for use in epitaxial processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • LPE Halfmoon Reaction Chamber

    LPE Halfmoon Reaction Chamber

    Semicorex LPE Halfmoon Reaction Chamber is indispensable for the efficient and reliable operation of SiC epitaxy, ensuring the production of high-quality epitaxial layers while reducing maintenance costs and increasing operational efficiency. **
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    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

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