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The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.