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We believe that long time period partnership is a result of top of the range, value added services, rich expertise and personal contact for Gan Manufacturers,Gan Sic,Gan Process,Gan Epitaxy,Gan On Silicon Carbide, We maintain timely delivery schedules, innovative designs, top quality and transparency for our buyers. Our moto should be to supply quality goods inside of stipulated time.
Gan Manufacturers, We have constructed strong and long co-operation relationship with an enormous quantity of companies within this business overseas. Immediate and specialist after-sale service supplied by our consultant group has happy our buyers. Detailed Info and parameters from the merchandise will probably be sent to you for any thorough acknowledge. Free samples may be delivered and company check out to our corporation. n Portugal for negotiation is constantly welcome. Hope to get inquiries type you and construct a long-term co-operation partnership.

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    PBN/PG Heaters

    Semicorex PBN/PG Heaters (Pyrolytic Boron Nitride/Pyrolytic Graphite) are engineered from advanced Boron Nitride ceramic materials, meticulously crafted to withstand extreme temperatures exceeding 1700°C. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Ring

    TaC Ring

    Semicorex TaC ring is a high-performance component designed for SiC single crystal growth, ensuring optimal gas flow distribution and temperature control. Choose Semicorex for our expertise in advanced materials and precision engineering, providing durable and reliable solutions that enhance the efficiency and quality of your semiconductor processes.*
  • CVD SiC Pancake Susceptor

    CVD SiC Pancake Susceptor

    Unleash the pinnacle of precision in semiconductor manufacturing with our cutting-edge CVD SiC Pancake Susceptor. This disc-shaped component, expertly designed for semiconductor equipment, serves as a crucial element for supporting thin semiconductor wafers during high-temperature epitaxial deposition processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • N-type SiC Substrates

    N-type SiC Substrates

    Semicorex N-type SiC substrates will continue to drive the semiconductor industry towards higher performance and lower energy consumption, as the core material for efficient energy conversion. Semicorex products are driven by technological innovation, and we are committed to providing customers with reliable material solutions and working with partners to define a new era of green energy.*
  • Silicon Nitride Bearing

    Silicon Nitride Bearing

    Semicorex Silicon Nitride Bearing represents the pinnacle of engineering excellence, offering unparalleled performance and reliability in a wide array of industrial applications. Renowned for their exceptional strength, durability, and versatility, Silicon Nitride Bearing have become the preferred choice across various sectors, from aerospace and automotive to medical and manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Pedestal

    Silicon Pedestal

    Semicorex Silicon Pedestal, a often overlooked yet critically important component, plays a vital role in achieving precise and repeatable results in semiconductor diffusion and oxidation processes. The specialized platform, upon which silicon boats rest within high-temperature furnaces, offers unique advantages that directly contribute to enhanced temperature uniformity, improved wafer quality, and ultimately, superior semiconductor device performance.**
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  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

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    Silicon carbide ceramic membranes have the characteristics of high chemical stability, good thermal shock resistance, strong hydrophilicity, large membrane flux, high mechanical strength, concentrated pore size distribution, and good pore structure gradient.

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