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    Semicorex CVD Epitaxial Deposition In Barrel Reactor is a highly durable and reliable product for growing epixial layers on wafer chips. Its high-temperature oxidation resistance and high purity make it suitable for use in the semiconductor industry. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for high-quality epixial layer growth.
  • Silicon Etch Plate for PSS Etching Applications

    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Silicon Epitaxy Susceptors

    Silicon Epitaxy Susceptors

    You can rest assured to buy Silicon Epitaxy Susceptors from our factory. Semicorex's Silicon Epitaxy Susceptor is a high-quality, high-purity product used in the semiconductor industry for epitaxial growth of the wafer chip. Our product has a superior coating technology that ensures the coating is present on all surfaces, preventing peeling off. The product is stable at high temperatures up to 1600°C, making it suitable for use in extreme environments.
  • TaC Coated Wafer Susceptor

    TaC Coated Wafer Susceptor

    Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Fingers

    SiC Fingers

    Semicorex SiC Fingers are precision-engineered components made from high-purity silicon carbide, designed to perform under the extreme demands of semiconductor manufacturing. Choosing Semicorex means access to advanced material expertise, high-precision processing, and reliable solutions trusted in critical wafer handling applications.*
  • Alumina Ceramic Arm

    Alumina Ceramic Arm

    Semicorex Alumina Ceramic Arm is a high-purity robotic component designed for precise and contamination-free wafer handling in semiconductor manufacturing. Choosing Semicorex ensures not only advanced alumina ceramic material quality but also precision craftsmanship that guarantees durability, cleanliness, and reliability in critical process environments.*
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  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

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