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epitaxy film, We have been sincerely looking forward to cooperate with customers all over the world. We believe we can satisfy you with our high-quality products and solutions and perfect service . We also warmly welcome customers to visit our company and purchase our products.

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  • CVD SiC Coated Graphite Susceptor

    CVD SiC Coated Graphite Susceptor

    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Vacuum Chucks

    Vacuum Chucks

    Semicorex Vacuum Chucks are the perfect solution for wafer handling in semiconductor and precision industries. With a variety of base material options, ceramic plate customizations, and precise flatness control, our vacuum chucks ensure reliable wafer stability and excellent process results. Designed to meet the stringent demands of modern semiconductor manufacturing, these chucks deliver unparalleled performance, ensuring that your processes remain efficient and cost-effective.*
  • Carbon and Graphite Soft Felt

    Carbon and Graphite Soft Felt

    Semicorex Carbon and graphite soft felt is a specialized material that is made from carbon fibers or graphite fibers that are intertwined to form a soft, flexible, and porous structure. It is commonly used in various industrial applications due to its unique properties.
  • SiC Epi Wafers

    SiC Epi Wafers

    Semicorex SiC epi wafers are becoming a key material for promoting technological innovation in high-frequency, high-temperature, and high-power application scenarios due to their excellent physical properties. Semicorex SiC Epi Wafers use industry-leading epitaxial growth technology and are designed to meet the high-end needs of new energy vehicles, 5G communications, renewable energy, and industrial power supplies, providing customers with high-performance, high-reliability core semiconductor solutions.*
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • ICP Etching Plate

    ICP Etching Plate

    Semicorex ICP Etching Plate is an advanced, high-performance component specifically designed for semiconductor applications, crafted from Silicon Carbide (SiC) material. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • What is Semiconductor Ion Implantation Technology?

    In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

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