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  • PSS Handling Carrier for Wafer Transfer

    PSS Handling Carrier for Wafer Transfer

    Semicorex's PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • ICP Etching Wafer Holder

    ICP Etching Wafer Holder

    Semicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • MOCVD Cover Star Disc Plate for Wafer Epitaxy

    MOCVD Cover Star Disc Plate for Wafer Epitaxy

    Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
  • Susceptor Disc

    Susceptor Disc

    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Coating Heater

    SiC Coating Heater

    The CVD SiC coating of Semicorex SiC Coating Heater offers superior performance in protecting heating elements from the harsh, corrosive, and reactive environments often encountered in processes such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Epitaxial Growth.**
  • SiC Arm

    SiC Arm

    Semicorex SiC Arm is a high-purity silicon carbide component designed for precise wafer handling and positioning in semiconductor manufacturing. Choosing Semicorex ensures unmatched material reliability, chemical resistance, and precision engineering that support the most demanding semiconductor processes.*
  • Related Blog
  • Reviews

  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • What is Thermal Annealing

    The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

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