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Disc Ceramic, "Create Values,Serving Customer!" is the aim we pursue. We sincerely hope that all customers will establish long term and mutually beneficial cooperation with us.If you wish to get more details about our company, Please contact with us now!

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  • SiC Susceptor for ICP Etch

    SiC Susceptor for ICP Etch

    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • 4

    4" Gallium Oxide Substrates

    Semicorex 4" Gallium Oxide Substrates represent a new chapter in the story of fourth-generation semiconductors, with an accelerating pace of mass production and commercialization. These substrates exhibit exceptional benefits for various advanced technological applications. Gallium Oxide substrates not only symbolize a significant advancement in semiconductor technology but also open up new avenues for improving device efficiency and performance across a spectrum of high-stakes industries. We at Semicorex are dedicated to manufacturing and supplying high-performance 4" Gallium Oxide Substrates that fuse quality with cost-efficiency.**
  • SiC Diffusion Furnace Tube

    SiC Diffusion Furnace Tube

    The advanced material properties of Semicorex SiC Diffusion Furnace Tube, including high flexural strength, outstanding oxidation and corrosion resistance, high wear resistance, low friction coefficient, superior high-temperature mechanical properties, and ultra-high purity, make it indispensable in the semiconductor industry, particularly for diffusion furnace applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Diffusion Furnace Tube that fuse quality with cost-efficiency.**
  • LPE SiC-Epi Halfmoon

    LPE SiC-Epi Halfmoon

    Semicorex LPE SiC-Epi Halfmoon is an indispensable asset in the world of epitaxy, providing a robust solution to the challenges posed by high temperatures, reactive gases, and stringent purity requirements.**
  • SiC Coating Ring

    SiC Coating Ring

    Semicorex SiC Coating Ring is a critical component in the demanding environment of semiconductor epitaxy processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • Silicon Carbide Focus Rings

    Silicon Carbide Focus Rings

    Silicon carbide focus rings, the crucial ring parts, are specially designed to improve the uniformity and stability of wafer etching in the semiconductor plasma etching. They are renowned for their excellent performance in promoting uniform plasma distribution and optimizing electric field environment.
  • Related Blog
  • Reviews

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

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