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China Compound Semiconductor Wafers Manufacturers, Suppliers, Factory

We emphasize advancement and introduce new products and solutions into the market each year for Compound Semiconductor Wafers,Etch Carrier(ICP/PSS),Wafer Handling,Silicon Carbide Processing Components,SiC Coating Coated Graphite Substrate, We look ahead to receiving your enquires quickly and hope to have the chance to get the job done together with you inside the future. Welcome to get a seem at our organization.
Compound Semiconductor Wafers, Since the establishment of our company, we have realized the importance of providing good quality products and the best before-sales and after-sales services. Most problems between global suppliers and clients are due to poor communication. Culturally, suppliers can be reluctant to question things they do not understand. We break down those barriers to ensure you get what you want to the level you expect, when you want it.

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  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Annealing

    Annealing after ion implantation is a key step in semiconductor device manufacturing, which affects the performance and reliability of the device.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • What Is Silicon Carbide (SiC)?

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