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China Compound Semiconductor Wafers Manufacturers, Suppliers, Factory

We emphasize advancement and introduce new products and solutions into the market each year for Compound Semiconductor Wafers,Etch Carrier(ICP/PSS),Wafer Handling,Silicon Carbide Processing Components,SiC Coating Coated Graphite Substrate, We look ahead to receiving your enquires quickly and hope to have the chance to get the job done together with you inside the future. Welcome to get a seem at our organization.
Compound Semiconductor Wafers, Since the establishment of our company, we have realized the importance of providing good quality products and the best before-sales and after-sales services. Most problems between global suppliers and clients are due to poor communication. Culturally, suppliers can be reluctant to question things they do not understand. We break down those barriers to ensure you get what you want to the level you expect, when you want it.

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  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

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  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Purification Technology of Graphite in SiC semiconductor

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  • What is Dummy Wafer

    A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.

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