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  • SiC Grinding Media

    SiC Grinding Media

    Semicorex SiC Grinding Media is crafted from silicon carbide ceramic, a material celebrated for its exceptional hardness and durability. Engineered to meet the rigorous demands of various industrial applications, SiC Grinding Media offers unparalleled efficiency and longevity.
  • Graphite Insulation Plate

    Graphite Insulation Plate

    Semicorex Graphite Insulation Plate's unique combination of properties makes it a versatile and indispensable material across a broad spectrum of industries.
  • 6 Inch Semi-Insulating HPSI SiC Wafer

    6 Inch Semi-Insulating HPSI SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • 8 inch EPI Top Ring

    8 inch EPI Top Ring

    Semicorex 8 inch EPI Top Ring is a SiC coated graphite component designed for use as the upper cover ring in epitaxial growth systems. Choose Semicorex for its industry-leading material purity, precise machining, and consistent coating quality that ensure stable performance and extended component life in high-temperature semiconductor processes.*
  • Alumina Fastener

    Alumina Fastener

    Semicorex Alumina Fastener is integral to the construction of equipment used in chemical vapor deposition (CVD), ion implantation, photolithography, and semiconductor manufacturing.
  • Alumina Plate Flange

    Alumina Plate Flange

    Semicorex Alumina Plate Flange represents a pinnacle of versatility and performance in ceramic engineering. Crafted from alumina ceramics, a material renowned for its exceptional properties, this flange embodies a perfect amalgamation of robustness, high temperature resistance, and electrical conductivity. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • What is the stress of quartz glass parts

    Stress in quartz glass components refers to the uneven internal stress generated by various factors. Essentially, it's the stored elastic strain generated by the unbalanced forces acting on atoms or molecules within the material. This can cause microscopic distortions in the material structure, which in turn can affect the object's macroscopic performance.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • Understanding the Complete Semiconductor Device Fabrication Process

    The fabrication of semiconductor devices primarily encompasses four types of processes: (1) Photolithography (2) Doping Techniques (3) Film Deposition (4) Etching Techniques The specific techniques involved include photolithography, ion implantation, rapid thermal processing (RTP), plasma-enhanced chemical vapor deposition (PECVD), sputtering, and both dry and wet etching methods.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

  • What is Silicon Nitride

    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

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