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    Semicorex Half Parts for SiC Epitaxial Equipment, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of SiC wafer epitaxy. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Tantalum Carbide Coated Plate

    TaC Tantalum Carbide Coated Plate

    Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC ALD Susceptor

    SiC ALD Susceptor

    Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**
  • Graphite Carrier for Epitaxial Reactors

    Graphite Carrier for Epitaxial Reactors

    Semicorex Graphite Carrier for Epitaxial Reactors is a SiC coated graphite component with precision micro-holes for gas flow, optimized for high-performance epitaxial deposition. Choose Semicorex for superior coating technology, customization flexibility, and industry-trusted quality.*
  • 8 inch EPI Susceptor

    8 inch EPI Susceptor

    Semicorex 8 Inch EPI Susceptor is a high-performance SiC-coated graphite wafer carrier designed for use in epitaxial deposition equipment. Choosing Semicorex ensures superior material purity, precision manufacturing, and consistent product reliability tailored to meet the demanding standards of the semiconductor industry.*
  • SiC-coated planetary susceptors

    SiC-coated planetary susceptors

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  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • SiC Cutting

    Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

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