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Our pursuit and company goal is to "Always satisfy our customer requirements". We continue to develop and design superior quality products for both our old and new customers and achieve a win-win prospect for our clients as well as us for Ceramic Sintering Furnace,MOCVD Ceiling Plate,MOCVD Chamber Lids,MOCVD Cover Plate,Silicon Carbide Ceramic Lid, For more information and facts, you should never wait to make contact with us. All inquiries from you may be highly appreciated.
Ceramic Sintering Furnace, Since our establishment, we keep on improving our products and solutions and customer service. We have been able to supply you with a wide range of high quality hair items at competitive prices. Also we can produce different hair merchandise according to your samples. We insist on high quality and reasonable price. Except this, we provide best OEM service. We warmly welcome OEM orders and customers all over the world to cooperate with us for mutual development in the future.

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    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

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