China Ceramic Sintering Furnace Manufacturers, Suppliers, Factory

With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.

Wafer carriers used in epixial growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex SiC Coated PSS Etching Carrier engineered specifically for these demanding epitaxy equipment applications. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

Semicorex CVD TaC Coating Ring is a high-performance component designed for demanding applications requiring exceptional wear resistance, thermal stability, and chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Semicorex TaC-Coating Crucible has emerged as an essential tool in the pursuit of high-quality semiconductor crystals, enabling advancements in material science and device performance. The TaC-Coating Crucible's unique combination of properties makes them ideally suited for the demanding environments of crystal growth processes, offering distinct advantages over traditional materials.**

Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**

SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.