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It is a good way to improve our products and service. Our mission is to develop creative products to customers with a good experience for ceramic parts,Grinding Chuck,alumina ceramic,alumina al2o3,alumina oxide, As a key enterprise of this industry, our corporation makes endeavours to become a leading supplier, dependant on the faith of expert quality & all over the world provider.
ceramic parts, We attained ISO9001 which provides solid foundation for our further development. Persisting in "High quality, Prompt Delivery, Competitive Price", now we have established long-term cooperation with clients from both overseas and domestically and get new and old clients' high comments. It is our great honor to meet your demands. We have been sincerely expecting your attention.

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  • SiN Plates

    SiN Plates

    Semicorex SiN Plates are versatile materials, prized for their mechanical strength, thermal conductivity, and electrical insulation, making them ideal for circuit substrates and heat spreaders. Choosing Semicorex SiN plates ensures high-quality, reliable performance for advanced electronic applications, backed by cutting-edge technology and stringent quality control.*
  • Silicon Carbide Sleeve

    Silicon Carbide Sleeve

    Semicorex Silicon Carbide Sleeve is commonly used as a wear-resistant and corrosion-resistant liner for equipment such as cylinders, pumps, valves, sliding bearings, and grinder drums.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • SiC Carrier for ICP

    SiC Carrier for ICP

    Semicorex SiC Carrier for ICP is a high-performance wafer holder made of SiC-coated graphite, designed specifically for use in inductively coupled plasma (ICP) etching and deposition systems. Choose Semicorex for our world-leading anisotropic graphite quality, precision small-batch manufacturing, and uncompromising commitment to purity, consistency, and process performance.*
  • Flexible Graphite Foil

    Flexible Graphite Foil

    Semicorex Flexible Graphite Foil is a high performance, flexible material designed for sealing and gasketing applications. When you choose a Semicorex product, you get superior quality and reliability, ensuring your most stringent industry standards are met.*
  • Isostatic Graphite Crucibles for Melting

    Isostatic Graphite Crucibles for Melting

    Semicorex Isostatic Graphite Crucibles for Melting are produced using isostatic pressing techniques, which enhance their material density and mechanical properties. This results in a vessel that not only withstands the extreme temperatures and corrosive environments typical of semiconductor processing but also offers long-term durability. The crucibles’ robustness ensures they can handle repeated thermal cycling without degradation, thereby providing consistent performance over extended operational periods. We at Semicorex are dedicated to manufacturing and supplying high-performance Isostatic Graphite Crucibles for Melting that fuse quality with cost-efficiency.
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  • Reviews

  • Different types of SiC ceramics

    Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Applications of Silicon Carbide

    Among the core components of electric vehicles, automotive power modules—primarily utilizing IGBT technology—play a crucial role. These modules not only determine the key performance of the electric drive system but also account for over 40% of the cost of the motor inverter.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • What is a TaC coating on graphite?

    In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

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