China Ceramic Gas Seal Ring Manufacturers, Suppliers, Factory

Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.

Intrinsic silicon refers to pure silicon that is free from impurities.

In chip manufacturing, photolithography and etching are two closely linked steps. Photolithography precedes etching, where the circuit pattern is developed on the wafer using photoresist. Etching then removes the film layers not covered by the photoresist, completing the transfer of the pattern from the mask to the wafer and preparing for subsequent steps like ion implantation.

Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

Recrystallized silicon carbide is a high-performance ceramic formed by combining SiC particles through an evaporation-condensation mechanism to form a strong solid-phase sintered body. Its most notable feature is that no sintering aids are added, and the final product is almost pure silicon carbide, which gives it extremely excellent high-temperature performance and chemical stability.

Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.