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    Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD SiC Coated Graphite Susceptor

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    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Susceptor Disc

    Susceptor Disc

    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • GaN Epitaxy Carrier

    GaN Epitaxy Carrier

    The Semicorex GaN Epitaxy Carrier is pivotal in semiconductor manufacturing, integrating advanced materials and precision engineering. Distinguished by its CVD SiC coating, this carrier offers exceptional durability, thermal efficiency, and protective capabilities, establishing itself as a standout in the industry. We at Semicorex are dedicated to manufacturing and supplying high-performance GaN Epitaxy Carrier that fuse quality with cost-efficiency.
  • SiC Coated Support Ring

    SiC Coated Support Ring

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    Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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