English
Home > Products > Polygonal Susceptor

China Polygonal Susceptor Manufacturers, Suppliers, Factory

We thinks what shoppers think, the urgency of urgency to act during the interests of a buyer position of basic principle, allowing for greater top quality, lessen processing costs, costs are extra reasonable, won the new and previous buyers the support and affirmation for Polygonal Susceptor,LPE Susceptor,LPE Susceptor Wafer,Barrel Susceptors for LPE,Epi Wafer, Excellent excellent, competitive selling prices, prompt delivery and dependable provider are guaranteed Kindly let us know your quantity requirement under each size category so that we will inform you accordingly.
Polygonal Susceptor, Our products are widely recognized and trusted by users and can meet continuously changing of economic and social needs. We welcome new and old customers from all walks of life to contact us for future business relationships and mutual success!

Related Products

Hot Products

  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
  • TaC Coated Porous Graphite

    TaC Coated Porous Graphite

    Semicorex TaC Coated Porous graphite, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
  • TaC Coated Graphite Chuck

    TaC Coated Graphite Chuck

    Semicorex TaC Coated Graphite Chuck is a high-performance component designed for precise wafer handling and high-temperature processes in semiconductor manufacturing. Choose Semicorex for its innovative, durable products that ensure optimal performance and longevity in demanding semiconductor applications.*
  • Microporous SiC Chuck

    Microporous SiC Chuck

    Semicorex Microporous SiC Chuck is a high-precision vacuum chuck designed for secure wafer handling in semiconductor processes. Choose Semicorex for our customizable solutions, superior material selection, and commitment to precision, ensuring optimal performance in your wafer processing needs.*
  • Carbon Carbon Crystallizer Tanks

    Carbon Carbon Crystallizer Tanks

    Semicorex Carbon Carbon Crystallizer Tanks are high-strength, high-temperature vessels made from premium carbon-carbon composite. Choose Semicorex for superior material quality, precision engineering, and reliable performance in extreme environments.*
  • Related Blog
  • Reviews

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

  • Introducing Silicon Material

    Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept