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    4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • PBN Heaters

    PBN Heaters

    Semicorex PBN Heaters boast a sophisticated triple-layered design engineered to redefine performance benchmarks. At its core lies a foundation crafted from high-purity pyrolytic boron nitride (PBN), renowned for its exceptional thermal conductivity and robust structural integrity. we look forward to becoming your long-term partner in China.
  • CVD SiC Coated Graphite Pancake Susceptor

    CVD SiC Coated Graphite Pancake Susceptor

    Semicorex provides high-quality CVD SiC coated graphite pancake susceptor. We have been manufacturer and supplier of graphite materials for many years. Our CVD SiC coated graphite pancake susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Quartz Crucible in Semiconductor

    Quartz Crucible in Semiconductor

    Semicorex cutting-edge Quartz Crucible in Semiconductor, the epitome of precision and reliability for semiconductor processing. Crafted from semiconductor-grade quartz, this crucible is engineered to meet the demanding requirements of the semiconductor industry, ensuring optimal performance and efficiency in every application. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Epi-Wafer Susceptor

    SiC Epi-Wafer Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Epi-Wafer Susceptor has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • TaC Coated Rings

    TaC Coated Rings

    As the professional manufacture, we would like to provide you TaC Coated Rings. Introducing the CVD Tac Coated Ring, a state-of-the-art solution for semiconductor equipment. This cutting-edge product boasts an advanced chemical vapor deposition (CVD) coating that provides exceptional durability and resistance to wear and tear.
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  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

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