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We now have a highly efficient crew to deal with inquiries from clients. Our intention is "100% shopper pleasure by our merchandise quality, price tag & our staff service" and take pleasure in a very good standing amongst purchasers. With quite a few factories, we can easily provide a wide vary of graphite plate,graphite slide plates,slide graphite plate supplier,slide plate with graphite plugs,graphite plugs, The concept of our corporation is "Sincerity, Speed, Services, and Satisfaction". We're going to follow this concept and get more and additional customers' fulfillment.
graphite plate, All of our solutions comply with international quality standards and are greatly appreciated in a variety of markets around the world. If you are interested in any of our products or would like to discuss a custom order, be sure to feel free to contact us. We've been looking forward to forming successful business relationships with new clients in the near future.

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  • High-purity Porous Graphite Material

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    As the professional manufacturer, we would like to provide you High-purity Porous Graphite Material. Semicorex provide high-quality porous graphite material with customized service, we offer high specifications porous graphite. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

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    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

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