English
Home > Products > Single Wafer Graphite Plate

China Single Wafer Graphite Plate Manufacturers, Suppliers, Factory

To get the stage of realizing dreams of our employees! To build a happier, more united and much more skilled crew! To reach a mutual benefit of our prospects, suppliers, the society and ourselves for Single Wafer Graphite Plate,Etch Carrier(ICP/PSS),High Purity Graphite,Graphite Disc,Sinlicon Epitaxy, Every one of the views and strategies are going to be tremendously appreciated! The good cooperation could enhance each of us into much better development!
Single Wafer Graphite Plate, We welcome an opportunity to do business with you and hope to have pleasure in attaching further details of our products and solutions. Excellent quality, competitive price, punctual delivery and dependable service can be guaranteed. For further inquires please do not hesitate to contact us.

Related Products

Hot Products

  • SiC Coated Graphite Trays

    SiC Coated Graphite Trays

    Semicorex SiC Coated Graphite Trays are high-performance carrier solutions specifically designed for AlGaN epitaxial growth in the UV LED industry. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding MOCVD environments.*
  • ICP Silicon Carbon Coated Graphite

    ICP Silicon Carbon Coated Graphite

    Semicorex's ICP Silicon Carbon Coated Graphite is the ideal choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns.
  • TaC Coated Graphite Chuck

    TaC Coated Graphite Chuck

    Semicorex TaC Coated Graphite Chuck is a high-performance component designed for precise wafer handling and high-temperature processes in semiconductor manufacturing. Choose Semicorex for its innovative, durable products that ensure optimal performance and longevity in demanding semiconductor applications.*
  • Graphite Electrode Rod

    Graphite Electrode Rod

    Semicorex Graphite Electrode Rods are high-purity graphite components used as core heating elements in vacuum furnaces. Choose Semicorex for unmatched material quality, precision machining, and reliable performance in high-temperature vacuum environments.*
  • Quartz Wafer Carrier

    Quartz Wafer Carrier

    Semicorex Quartz Wafer Carrier, designed to exceed industry standards and optimize your production processes. This meticulously crafted carrier is engineered with precision and reliability to meet the exacting demands of the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Etching Carrier Holder for PSS Etching

    Etching Carrier Holder for PSS Etching

    Semicorex's Etching Carrier Holder for PSS Etching is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Semicorex technology for Specialty Graphite

    As a leading upstream graphite material manufacturer in the semiconductor industry, Semicorex prioritizes the availability, usability, and durability of its materials, setting the standard for excellence in the field.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

    As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept