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It is a good way to boost our products and solutions and repair. Our mission is always to establish artistic products and solutions to consumers having a excellent expertise for epitaxy equipment,silicon carbide susceptor,susceptor,glass carrier wafer,6 inch wafer carrier, Our items have exported to North America, Europe, Japan, Korea, Australia, New Zealand, Russia and other countries. On the lookout ahead to make up a good and long-lasting cooperation with you in coming potential!
epitaxy equipment, Our staffs are adhering to the "Integrity-based and Interactive Development" spirit, and the tenet of "First-class Quality with Excellent Service". According to the needs of every customer, we provide customized & personalized services to help customers achieve their goals successfully. Welcome clients from home and abroad to call and inquire!

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  • CVD SiC Showerhead

    CVD SiC Showerhead

    Semicorex CVD SiC Showerhead is an essential component in modern CVD processes for achieving high-quality, uniform thin films with improved efficiency and throughput. The CVD SiC Showerhead's superior gas flow control, contribution to film quality, and long lifespan make it indispensable for demanding semiconductor manufacturing applications.**
  • Porous Ceramic Vacuum Chuck

    Porous Ceramic Vacuum Chuck

    Semicorex Porous Ceramic Vacuum Chuck's primary function lies in its ability to provide uniform air and water permeability, a feature that ensures the even distribution of stress and robust adhesion of silicon wafers. This characteristic is crucial during the grinding process, as it prevents the wafer from slipping, thereby maintaining the integrity of the operation.**
  • Barrel Susceptor with SiC Coating in Semiconductor

    Barrel Susceptor with SiC Coating in Semiconductor

    If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
  • Silicon Wafer Heater

    Silicon Wafer Heater

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. We provide heaters, support crucibles, heat shields and insulating components for single crystal growing processes and materials. We focus on semiconductor industries, our Silicon Wafer Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • SiC Steering Mirror

    SiC Steering Mirror

    Semicorex SiC Steering Mirror is a remarkable material that combines durability, resilience, and exceptional optical performance, making it indispensable in advanced optical systems across various high-tech industries.
  • High Purity Graphite Rigid Felt

    High Purity Graphite Rigid Felt

    Semicorex provides High Purity Graphite Rigid Felt, a rigid insulation material based on carbon fibers. We have been manufacturer and supplier of graphite materials for many years. Our High Purity Graphite Rigid Felt has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

    When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

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