English
Home > Products > wafer sic

China wafer sic Manufacturers, Suppliers, Factory

Our company insists all along the quality policy of "product good quality is base of enterprise survival; buyer fulfillment will be the staring point and ending of an company; persistent improvement is eternal pursuit of staff" and also the consistent purpose of "reputation very first, shopper first" for wafer sic,lpe sic epitaxy,asm epitaxy,epitaxy of semiconductors,epi wafer, We're going to empower people by communicating and listening, Setting an example to others and learning from experience.
wafer sic, Our company always concentrate on the development of the international market. We have now a lot of customers in Russia , European countries, the USA, the Middle East countries and Africa countries. We always follow that quality is foundation while service is guarantee to meet all customers.

Related Products

Hot Products

  • Silicon Carbide SiC Coated Barrel Susceptor

    Silicon Carbide SiC Coated Barrel Susceptor

    Semicorex is a leading independently owned manufacturer of Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Silicon Carbide SiC Coated Barrel Susceptor have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • ICP Silicon Carbon Coated Graphite

    ICP Silicon Carbon Coated Graphite

    Semicorex's ICP Silicon Carbon Coated Graphite is the ideal choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns.
  • Monocrystalline Silicon Epitaxial Susceptor

    Monocrystalline Silicon Epitaxial Susceptor

    Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Graphite Parts

    TaC Coated Graphite Parts

    Semicorex TaC Coated Graphite Parts are precision-crafted components that are specially designed to withstand the demanding environment of semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Susceptor Disc

    Susceptor Disc

    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • 8 inch EPI Top Ring

    8 inch EPI Top Ring

    Semicorex 8 inch EPI Top Ring is a SiC coated graphite component designed for use as the upper cover ring in epitaxial growth systems. Choose Semicorex for its industry-leading material purity, precise machining, and consistent coating quality that ensure stable performance and extended component life in high-temperature semiconductor processes.*
  • Related Blog
  • Reviews

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept