English
Home > Products > asm epitaxy

China asm epitaxy Manufacturers, Suppliers, Factory

Our goal is usually to consolidate and improve the high quality and service of existing solutions, meanwhile continuously create new items to meet unique customers' requires for asm epitaxy,cvd sic coating,lpe sic epitaxy,epitaxy mocvd,mbe mocvd, If you're interested in any of our merchandise or wish to talk about a tailored buy, you should really feel totally free to get hold of us.
asm epitaxy, During in 11 years, We have now participated in more than 20 exhibitions, obtains the highest praise from each customer. Our company has been devoting that "customer first" and committed to helping customers expand their business, so that they become the Big Boss !

Related Products

Hot Products

  • Graphite Powder

    Graphite Powder

    Semicorex Graphite Powder (99.999% purity, 1-5 µm particle size) is a high-performance material essential for semiconductor crystal growth, offering superior purity and stability. Semicorex ensures the highest quality standards, providing tailored solutions for advanced manufacturing.*
  • PECVD Graphite Boat

    PECVD Graphite Boat

    Semicorex provide high-quality PECVD Graphite Boat with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 8-inch P-type SiC Wafers

    8-inch P-type SiC Wafers

    Semicorex 8-inch P-type SiC wafers deliver outstanding performance for next-generation power, RF, and high-temperature devices. Choose Semicorex for superior crystalline quality, industry-leading uniformity, and trusted expertise in advanced SiC materials.*
  • Silicon Nitride Disk

    Silicon Nitride Disk

    Semicorex Silicon Nitride Disk represents a pinnacle of material science innovation, combining the exceptional properties of silicon and nitrogen into a versatile and robust disk-shaped form. Crafted through advanced manufacturing processes, this Silicon Nitride Disk embodies high thermal stability, superior mechanical strength, remarkable wear resistance, and excellent chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 4-inch SiC Boats

    4-inch SiC Boats

    Semicorex 4-Inch SiC Boats are high-performance wafer carriers designed for superior thermal and chemical stability in semiconductor manufacturing. Trusted by industry leaders, Semicorex combines advanced materials expertise with precision engineering to deliver products that enhance yield, reliability, and operational efficiency.*
  • Tantalum Carbide Chuck

    Tantalum Carbide Chuck

    Semicorex Tantalum Carbide Chuck is an advanced component used in semiconductor manufacturing equipment, renowned for its exceptional thermal and mechanical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • Etching Process Parameters

    Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept