English
Home > Products > pancake susceptor

China pancake susceptor Manufacturers, Suppliers, Factory

We've been convinced that with joint efforts, the enterprise between us will bring us mutual benefits. We are able to assure you product or service quality and aggressive cost for pancake susceptor,Flat Susceptor,SiC coating,wafer susceptor,CVD SiC, We adhere towards the tenet of "Services of Standardization, to fulfill Customers' Demands".
pancake susceptor, We've more than 200 staff including experienced managers, creative designers, sophisticated engineers and skilled workers. Through hard work of all employees for the past 20 years own company grew stronger and stronger. We always apply the "client first" principle. We also always fulfill all contracts to the point and therefore enjoy excellent reputation and trust among our customers. You are very welcome to personally visit our company.We hope to start a business partnership on the basis of mutual benefit and successful development . For more information remember to do no hesitate to contact us.

Related Products

Hot Products

  • SiC Reflector

    SiC Reflector

    Semicorex SiC reflector is a pivotal element in various semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • TaC Coated Planetary Susceptor

    TaC Coated Planetary Susceptor

    Semicorex TaC Coated Planetary Susceptor is a highly specialized component designed for use in the epitaxial processes of semiconductor manufacturing. Semicorex is dedicated to delivering top-quality products at competitive prices. We are eager to establish a long-term partnership with you in China.*
  • ALD Planetary Susceptor

    ALD Planetary Susceptor

    Semicorex ALD Planetary Susceptor is important in ALD equipment due to their ability to withstand harsh processing conditions, ensuring high-quality film deposition for a variety of applications. As the demand for advanced semiconductor devices with smaller dimensions and enhanced performance continues to grow, the use of the ALD Planetary Susceptor in ALD is expected to expand further.**
  • Wafer Susceptor

    Wafer Susceptor

    Semicorex wafer susceptor is specially designed for the semiconductor epitaxy process. It plays a vital role in ensuring the precision and efficiency of wafer handling. We are a leading enterprise in the Chinese semiconductor industry, committed to providing you with the best products and services.*
  • Carbon Fiber Paper

    Carbon Fiber Paper

    Semicorex Carbon Fiber Paper is a critical component for enhancing the efficiency, durability, and performance of fuel cells and other electrochemical devices.
  • 8-inch P-type SiC Wafers

    8-inch P-type SiC Wafers

    Semicorex 8-inch P-type SiC wafers deliver outstanding performance for next-generation power, RF, and high-temperature devices. Choose Semicorex for superior crystalline quality, industry-leading uniformity, and trusted expertise in advanced SiC materials.*
  • Related Blog
  • Reviews

  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • Knowing GaN

    Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

Related Search

Pancake SusceptorPancake SusceptorsPancake Susceptors for LPE

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept