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China Wafer Deposition Manufacturers, Suppliers, Factory

Our progress depends on the highly developed products ,great talents and repeatedly strengthened technology forces for Wafer Deposition,Graphite Susceptor,Satellite Platforms for MOCVD,MOCVD Graphite Boat,MOCVD Epitaxial SiC Tray, We warmly welcome pals from all walks of lifetime to hunt mutual cooperation and generate a far more outstanding and splendid tomorrow.
Wafer Deposition, Our company's main merchandise are widely used all over the world; 80% of our products exported to the United States, Japan, Europe and other markets. All stuff sincerely welcome guests come to visit our factory.

Hot Products

High-Temperature SiC-Coated Barrel Susceptor
When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.
RTP Graphite Carrier Plate
Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
MOCVD Susceptor for Epitaxial Growth
Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
SiC MOCVD Inner Segment
Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
SiC Disc Susceptor
Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
SiC Coating Component
Semicorex SiC Coating Component is an essential material designed to meet the demanding requirements of the SiC epitaxy process, a pivotal stage in semiconductor manufacturing. It plays a critical role in optimizing the growth environment for silicon carbide (SiC) crystals, contributing significantly to the quality and performance of the final product.*

Related Blog
Reviews

What is the advantage of silicon carbide?
What is the diffusion furnace?
A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.
Coating in the thermal field of semiconductor silicon single crystals
The coated parts in semiconductor silicon single crystal hot field are generally coated by CVD method, including pyrolytic carbon coating, Silicon Carbide coating and Tantalum Carbide coating, each with different characteristics.
Heteroepitaxy of 3C-SiC: An Overview
The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.
How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?
Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.
Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase
Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

China Wafer Deposition Manufacturers, Suppliers, Factory

Related Products

Hot Products

High-Temperature SiC-Coated Barrel Susceptor

RTP Graphite Carrier Plate

MOCVD Susceptor for Epitaxial Growth

SiC MOCVD Inner Segment

SiC Disc Susceptor

SiC Coating Component

What is the advantage of silicon carbide?

What is the diffusion furnace?

Coating in the thermal field of semiconductor silicon single crystals

Heteroepitaxy of 3C-SiC: An Overview

How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

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