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Uv Led, In the increasingly competitive market, With sincere service high quality merchandise and well-deserved reputation, we always supply customers support on items and techniques to achieve long-term cooperation. Living by quality, development by credit is our eternal pursuit, We firmly believe that after your visit we'll become long-term partners.

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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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