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    Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • MOCVD Wafer Carriers for Semiconductor Industry

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    Semicorex MOCVD Wafer Carriers for Semiconductor Industry is a top-of-the-line carrier designed for use in the semiconductor industry. Its high-purity material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • TaC Coating Graphite Cover

    TaC Coating Graphite Cover

    Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coating Halfmoon Part

    Tantalum Carbide Coating Halfmoon Part

    Semicorex Tantalum Carbide Coating Halfmoon Part is a highly specialized component designed for use in the epitaxial deposition process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC-coated Wafer Disc

    SiC-coated Wafer Disc

    The Semicorex SiC-coated Wafer Disc represents a leading advancement in semiconductor manufacturing technology, playing an essential role in the complex process of fabricating semiconductors. Engineered with meticulous precision, this disc is crafted from superior SiC-coated graphite, delivering outstanding performance and durability for silicon epitaxy applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC-coated Wafer Disc that fuse quality with cost-efficiency.
  • SiC Arm

    SiC Arm

    Semicorex SiC Arm is a high-purity silicon carbide component designed for precise wafer handling and positioning in semiconductor manufacturing. Choosing Semicorex ensures unmatched material reliability, chemical resistance, and precision engineering that support the most demanding semiconductor processes.*
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  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

    When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

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