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Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

Both are N-type semiconductors, but what's the difference between arsenic and phosphorus doping in single-crystal silicon? In single-crystal silicon, arsenic (As) and phosphorus (P) are both commonly used N-type dopants (pentavalent elements that provide free electrons). However, due to differences in atomic structure, physical properties, and processing characteristics, their doping effects and application scenarios differ significantly.