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Thermal insulation, Our product quality is one of the major concerns and has been produced to meet the customer's standards. "Customer services and relationship" is another important area which we understand good communication and relationships with our customers is the most significant power to run it as a long term business.

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  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • SiC Coated ICP Etching Carrier

    SiC Coated ICP Etching Carrier

    Semicorex SiC Coated ICP Etching Carrier engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • RTP/RTA SiC Coating Carrier

    RTP/RTA SiC Coating Carrier

    Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
  • SiC Coated Plate Carriers for MOCVD

    SiC Coated Plate Carriers for MOCVD

    Semicorex SiC Coated Plate Carriers for MOCVD is a high-quality carrier designed for use in the semiconductor manufacturing process. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process.
  • Monocrystalline Silicon Wafer Susceptor

    Monocrystalline Silicon Wafer Susceptor

    Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.
  • Barrel Susceptor Silicon Carbide Coated Graphite

    Barrel Susceptor Silicon Carbide Coated Graphite

    Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
  • Related Blog
  • Reviews

  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • MOCVD is the key equipment

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • What is the notch on wafers?

    The wafer notch is a V-shaped or U-shaped groove on the edge of a semiconductor wafer. Far from being a defect incurred during the manufacturing process, it is the critical structural marker that was intentionally designed, whose core function lies in enabling precise positioning and orientation identification of the wafer. Wafer flat was used as the orientation marking in the early stages of wafer technology development. However, as wafer sizes gradually increased, the flat-edge design occupied more effective area, thus being gradually replaced by the more compact notch.

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