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Support Crucible, In the increasingly competitive market, With sincere service high quality merchandise and well-deserved reputation, we always supply customers support on items and techniques to achieve long-term cooperation. Living by quality, development by credit is our eternal pursuit, We firmly believe that after your visit we'll become long-term partners.

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  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • GaN-on-SiC Substrate

    GaN-on-SiC Substrate

    Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Rings

    TaC Coated Rings

    As the professional manufacture, we would like to provide you TaC Coated Rings. Introducing the CVD Tac Coated Ring, a state-of-the-art solution for semiconductor equipment. This cutting-edge product boasts an advanced chemical vapor deposition (CVD) coating that provides exceptional durability and resistance to wear and tear.
  • MOCVD Wafer Carriers for Semiconductor Industry

    MOCVD Wafer Carriers for Semiconductor Industry

    Semicorex MOCVD Wafer Carriers for Semiconductor Industry is a top-of-the-line carrier designed for use in the semiconductor industry. Its high-purity material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • Graphite Foil Roll

    Graphite Foil Roll

    Semicorex Graphite Foil Roll is an advanced material made from expanded natural graphite, designed to meet the precise demands of high-temperature applications. With resilience, chemical inertness, and superior thermal properties, this product stands out as an essential component in various industries including semiconductor, solar, and ceramics.**
  • Solid Silicon Carbide Focusing Ring

    Solid Silicon Carbide Focusing Ring

    The Semicorex Solid Silicon Carbide Focusing Ring is a pivotal component in semiconductor manufacturing, strategically positioned outside the wafer to maintain direct contact. By utilizing an applied voltage, this ring focuses the plasma traversing it, thereby enhancing the process uniformity on the wafer. Constructed solely from Chemical Vapor Deposition Silicon Carbide (CVD SiC), this focus ring embodies the exceptional qualities demanded by the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Solid Silicon Carbide Focusing Ring that fuse quality with cost-efficiency.
  • Related Blog
  • Reviews

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

  • Ceramic Heaters

    In the front-end process (FEOL) of semiconductor manufacturing, the wafer needs to be subjected to various process treatments, especially the wafer needs to be heated to a certain temperature, and there are strict requirements, because the uniformity of temperature has a very important impact on the product yield; at the same time, semiconductor equipment needs to work in the presence of vacuum, plasma and chemical gases, which requires the use of ceramic heaters.

  • Synthesis method of high-purity Silicon Carbide (SiC) powder

    At present, the synthesis methods of high-purity SiC powder for growing single crystals mainly include: CVD method and improved self-propagating synthesis method (also known as high-temperature synthesis method or combustion method).

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Isostatic Graphite Production Technology

    Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.

  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

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