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China Single-Crystal Manufacturers, Suppliers, Factory

"Control the standard by the details, show the toughness by quality". Our firm has strived to establish a highly efficient and stable workers workforce and explored an effective high-quality management system for Single-Crystal,Semiconductor Devices,Wafer Carrier,Epitaxial Growth In IC Fabrication,GaN Epitaxy, We warmly welcome all intrigued customers to speak to us for additional information and facts.
Single-Crystal, We have been in operation for more than 10 years. We have been dedicated to quality products and solutions and consumer support. We currently own 27 product utility and design patents. We invite you to visit our company for a personalized tour and advanced business guidance.

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  • PFA Wafer Cassette

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  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • What is Silicon Nitride

    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

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