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  • Pancake Susceptor for Wafer Epitaxial Process

    Pancake Susceptor for Wafer Epitaxial Process

    Semicorex pancake susceptor for wafer epitaxial process is a high purity graphite base by CVD SiC coated. Our pancake susceptor for wafer epitaxial process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Aluminum Nitride Ceramic Chuck

    Aluminum Nitride Ceramic Chuck

    Semicorex Aluminum Nitride Ceramic Chuck represents a cutting-edge solution for semiconductor wafer processing, specifically designed to securely hold wafers in place during various stages of manufacturing. Functioning as an electrostatic chuck (ESC), this innovative device leverages the exceptional properties of aluminum nitride ceramic to ensure precise and reliable wafer retention. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Flexible Graphite Foil

    Flexible Graphite Foil

    Semicorex Flexible Graphite Foil is a high performance, flexible material designed for sealing and gasketing applications. When you choose a Semicorex product, you get superior quality and reliability, ensuring your most stringent industry standards are met.*
  • SiC Coating Flat Susceptor

    SiC Coating Flat Susceptor

    Semicorex SiC Coating Flat Susceptor is a high-performance substrate holder designed for precise epitaxial growth in semiconductor manufacturing. Choose Semicorex for reliable, durable, and high-quality susceptors that enhance the efficiency and precision of your CVD processes.*
  • Porous SiC Vacuum Chuck

    Porous SiC Vacuum Chuck

    Semicorex Porous SiC Vacuum Chuck is designed for precise and reliable wafer handling, offering customizable material options to meet a wide range of semiconductor processing needs. Choose Semicorex for its commitment to high-quality, durable solutions that deliver optimal performance and efficiency in every application.*
  • SiC Process Tubes

    SiC Process Tubes

    Semicorex SiC Process Tubes are made by high purity SiC ceramic with CVD SiC coating, it is suitable for horizontal furnace in Semiconductor. Considering the product quality and after-sales service, Semicorex is the one that wants to do high-quality business with our worldwide customers.*
  • Related Blog
  • Reviews

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • What is Crystal Growth Furnace System

    The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

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