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  • High-Purity SiC Boat

    High-Purity SiC Boat

    Constructed from silicon carbide of exceptional purity, The Semicorex High-Purity SiC Boat demonstrates superior thermal stability, mechanical robustness, and resistance to chemicals. This material selection is critical to diminish potential contamination, safeguard the wafers from harm, and endure the rigorous conditions encountered in semiconductor fabrication. Semicorex’s commitment to manufacturing and supplying market-leading quality products, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • Silicon Substrate

    Silicon Substrate

    Semicorex Silicon substrate, serves as the canvas upon which intricate electronic circuits are crafted. Derived from silicon, one of the most abundant elements in the Earth's crust, this crystalline substrate forms the fundamental material for manufacturing semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Alumina Plate Flange

    Alumina Plate Flange

    Semicorex Alumina Plate Flange represents a pinnacle of versatility and performance in ceramic engineering. Crafted from alumina ceramics, a material renowned for its exceptional properties, this flange embodies a perfect amalgamation of robustness, high temperature resistance, and electrical conductivity. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Epitaxy Component

    Epitaxy Component

    Semicorex Epitaxy Component is a crucial element in the production of high-quality SiC substrates for advanced semiconductor applications, a reliable choice for LPE reactor systems. By selecting Semicorex Epitaxy Component, customers can be confident in their investment and enhance their production capabilities in the competitive semiconductor market.*
  • PAN based Carbon Fiber

    PAN based Carbon Fiber

    Semicorex PAN Based Carbon Fiber Graphite Soft Felt is a lightweight, high-performance insulation material designed for use in high-temperature environments. Choose Semicorex for our commitment to delivering innovative, reliable, and tailored solutions that enhance efficiency and precision in critical applications.*
  • Related Blog
  • Reviews

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • MOCVD is the key equipment

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

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